| PART |
Description |
Maker |
| D1RW-C13-008 D1RW-C13-008-EU D1RW-C13-00812 D1RW-C |
Vigilant? Series LED Based Obstruction Lights
|
Dialight Corporation
|
| TA0287A |
SAW Filter 864 MHz SMD 3.8隆驴3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| MH64S72VJG-5 |
4 /831 /838 /208-BIT ( 67 /108 /864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM 4831838208位（67108864 - Word2位）同步动态随机存储器
|
Mitsubishi Electric, Corp.
|
| D464B13001 |
SafeSite L-864 Red LED Medium Intensity Beacon
|
Dialight Corporation
|
| MH64S72AWJA-6 MH64S72AWJA-8 MH64S72AWJA-7 |
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
4 /831 /838 /208-BIT ( 67 /108 /864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
http://
Mitsubishi
|
| EH1320TS-36.864M |
OSCILLATORS 20PPM 0 70 3.3V 4 36.864MHZ TS HCMOS FULL 14PIN DIP CRYSTAL OSCILLATOR, CLOCK, 36.864 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| SIR-563ST3F07 |
Infrared light emitting diode, top view type
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Rohm
|
| MH64S72AWJA-6 MH64S72AWJA-8 |
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
|
